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극자외선 리소그라피에서의 Sub-resolution assist feature를 이용한 근접효과보정Optical proximity correction using sub-resolution assist feature in extreme ultraviolet lithography
- Other Titles
- Optical proximity correction using sub-resolution assist feature in extreme ultraviolet lithography
- Issue Date
- Sep-2016
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- EUVL; phase shift mask; sub-resolution assist feature; lithography simulation; imaging performance
- Citation
- 반도체디스플레이기술학회지, v.15, no.3, pp 1 - 5
- Pages
- 5
- Indexed
- KCI
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 15
- Number
- 3
- Start Page
- 1
- End Page
- 5
- ISSN
- 1738-2270
- Abstract
- In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region’s reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)