EUV 펠리클 투과도에 따른 이미지 전사 특성 분석Imaging performance of the dependence of EUV pellicle transmittance
- Other Titles
- Imaging performance of the dependence of EUV pellicle transmittance
- Authors
- 우동곤; 김정환; 김정식; 홍성철; 안진호
- Issue Date
- Sep-2016
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- EUVL; coherent scattering microscopy (CSM); pellicle; critical dimension (CD); normalized image log slope (NILS); image contrast
- Citation
- 반도체디스플레이기술학회지, v.15, no.3, pp.35 - 39
- Indexed
- KCI
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 15
- Number
- 3
- Start Page
- 35
- End Page
- 39
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22199
- ISSN
- 1738-2270
- Abstract
- Extreme Ultraviolet Lithography (EUVL) is the most promising technique in the field of Next Generation Lithography (NGL) expected to be used in the 1x-nm node for High Volume Manufacturing (HVM). But there exits remaining challenges for proper defect control of EUV mask. It was considered development of EUV pellicle for protecting the EUV mask has many obstacles due to high extinction coefficient of EUV wavelength. Recently researchers in the industry of semiconductor argue about the necessity of EUV pellicle and make effort to achieve it. In this paper, we investigated that the relationship between imaging performance and transmittance of EUV pellicle quantitatively. We made in-house EUV pellicle and analyzed its imaging performance of the dependence of pellicle transmittance using Coherent Scattering Microscopy(CSM). The imaging performance of EUV mask with pellicle is affected by its transmittance and we found that the performance of EUV mask improved with higher transmittance pellicle.
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