Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states
- Authors
- Sheng, Jiazhen; Choi, Dong-Won; Lee, Seung-Hwan; Park, Jozeph; Park, Jin-Seong
- Issue Date
- Aug-2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.32, pp.7571 - 7576
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY C
- Volume
- 4
- Number
- 32
- Start Page
- 7571
- End Page
- 7576
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22268
- DOI
- 10.1039/c6tc01199c
- ISSN
- 2050-7526
- Abstract
- Indium oxide (InOx) films are grown by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]-indium (InCA-1) as the metal precursor and hydrogen peroxide (H₂O₂) as the oxidant. It is found that the electrical properties of the indium oxide layers strongly depend on the ALD growth temperature. Relatively low electrical resistivity (∼10⁻⁴ Ω cm) and high optical transparency (>85%) are obtained at growth temperatures higher than 200 °C, which make the indium oxide film suitable for transparent conducting oxide (TCO) applications. On the other hand, at relatively low growth temperatures below 150 °C, indium oxide behaves as a transparent semiconducting oxide (TSO). Thin film transistors (TFTs) incorporating this material as the active layer exhibit reasonably high performance with saturation mobility exceeding 10 cm² V⁻¹ s⁻¹ and a threshold voltage near 0 V.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22268)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.