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Fermi-level unpinning in Pt/Al₂O₃/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces

Authors
Kim, SeongkyungYoo, SijungLim, HajinKim, Joon-RaeJeong, Jae KyeongKim, Hyeong Joon
Issue Date
Aug-2016
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.109, no.7, pp.1 - 5
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
109
Number
7
Start Page
1
End Page
5
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22286
DOI
10.1063/1.4961492
ISSN
0003-6951
Abstract
A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization of the GaSb surface and the subsequent rapid thermal annealing allowed for high quality GaSb/Al2O3 interfacial characteristics; the interfacial trap density value was <= 2.0 x 10(12) cm(-2) eV(-1) in an energy range of 0.05 <= E-T - E-v <= 0.45 eV for the PMOS capacitor via rapid thermal annealing at 575 degrees C. A physical rationale was given on the basis of the thermo-chemical conversion of Ga2O into Ga2O3 and the conformal elimination of Sb related elements and oxides on the GaSb surface.
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