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High-Performance 2D Rhenium Disulfide (ReS₂) Transistors and Photodetectors by Oxygen Plasma TreatmentHigh-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
- Other Titles
- High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
- Authors
- Shim, Jaewoo; Oh, Aely; Kang, Dong-Ho; Oh, Seyong; Jang, Sung Kyu; Jeon, Jaeho; Jeon, Min Hwan; Kim, Minwoo; Choi, Changhwan; Lee, Jaehyeong; Lee, Sungjoo; Yeom, Geun Young; Song, Young Jae; Park, Jin-Hong
- Issue Date
- Aug-2016
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Citation
- Advanced Materials, v.28, no.32, pp 6985 - 6992
- Pages
- 8
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Advanced Materials
- Volume
- 28
- Number
- 32
- Start Page
- 6985
- End Page
- 6992
- ISSN
- 0935-9648
1521-4095
- Abstract
- A high-performance ReS₂-based thin-film transistor and photodetector with high on/off-current ratio (10⁴), high mobility (7.6 cm² V⁻¹ s⁻¹), high photoresponsivity (2.5 x 10⁷ A W⁻¹), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O₂ plasma treatment is reported.
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)