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Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation
- Authors
- Choi, Uy Hyun; Yoon, Sungyeol; Yoon, Doo Hyun; Tak, Young Jun; Kim, Yeong Gyu; Ahn, Byung Du; Park, Jin Seong; Kim, Hyun Jae
- Issue Date
- Jul-2016
- Publisher
- IOP Publishing Ltd.
- Keywords
- GeInGaO; passivation layer; thin-film transistor; diffusion; oxygen vacancy
- Citation
- Journal of Physics D: Applied Physics, v.49, no.28, pp 1 - 6
- Pages
- 6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of Physics D: Applied Physics
- Volume
- 49
- Number
- 28
- Start Page
- 1
- End Page
- 6
- ISSN
- 0022-3727
1361-6463
- Abstract
- In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y₂O₃ (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from -10.3 V for the YO PVL to -4.8 V for the LYO PVL, a 54% improvement.
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)