ScholarWorks@Hanyang University: 2. Conference Papers

2. Conference Papers(서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers)4,848

Browse

rss_1.0 rss_2.0 atom_1.0

Collection's Items (Sorted by Submit Date in Descending order): 921 to 940 of 4848

Facile Control of p-type SnO TFT Performance with Restraining Redox Reaction by ITO Interlayers

ConferenceIssue Date2022

The Impact of Oxygen Reactants on ALD InOx films using novel dimethyl[N1-(tert-butyl)-N2,N2-dimethylethane-1,2-diamine]indium precursor

ConferenceIssue Date2022

Enhanced Crystallinity Using In Situ Atomic Layer Deposition Process of Al2O3 on p type SnO Thin Film and the Associated Device Applications

ConferenceIssue Date2022

Analysis of rearranged organic/inorganic hybrid 2D Tincone film via molecular layer deposition

ConferenceIssue Date2022

Growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tim oxide by atomic layer deposition

ConferenceIssue Date2022

Atmospheric Pressure Spatial ALD of Al2O3 thin films for flexible electronics

ConferenceIssue Date2022

Plasma-Enhanced Atomic Layer Deposition of Aluminum-Indium Oxide Thin Films and Associated Device Applications

ConferenceIssue Date2022

A Random Access Gate Driver Using a‐IGZO TFTs for External Compensation of High‐Resolution, High‐Frame‐Rate AMOLEDs

ConferenceIssue Date2022

Nitrogen Behaviors in PEALD-grown SiO2 Films Using N2O Plasma Reactant and Its Application in ALD-IZO TFTs

ConferenceIssue Date2022

High Temperature Annealing Behavior of IGZO Using Plasma Enhanced Atomic Layer Deposition

ConferenceIssue Date2022

Structural rearrangement of molecular layer deposited metalcone to 2D-like Carbon by electron beam irradiation for area selective deposition

ConferenceIssue Date2022

HfO2 Films having wide ALD window using a Novel Heteroleptic Hf Precursor by Plasma-Enhanced Atomic Layer Deposition

ConferenceIssue Date2022

Plasma enhanced Atomic Layer Deposited Indium Oxide Film Using a New Novel Liquid DMION Indium Precursor For Thin Film Transistors

ConferenceIssue Date2022

Diffusion barrier characteristics of Al2O3-alucone multi-layer structures for flexible OLED display applications

ConferenceIssue Date2022

Simultaneous UV and thermal energy for stable n doping process of coplanar ALD IGZO TFT

ConferenceIssue Date2022

Alumina infilled PbS quantum dot hybrid InGaZnO red-NIR phototransistor via atomic layer deposition

ConferenceIssue Date2022

Growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition

ConferenceIssue Date2022

The significance of Paring In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor

ConferenceIssue Date2022

나시콘계 고체전해질 조성 합성 및 화학적 특성 평가

ConferenceIssue Date2022Place대전 컨벤션 센터

하이브리드 고체전해질 조성 합성 및 화학적 특성 평가

ConferenceIssue Date2022Place대전 컨벤션 센터

first prev 41 42 43 44 45 46 47 48 49 50 next last

Discover

CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366

COPYRIGHT © 2024 HANYANG UNIVERSITY.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

LIBRARY