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Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors
- Issue Date
- Apr-2016
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.108, no.15, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 108
- Number
- 15
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
1077-3118
- Abstract
- Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 degrees C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm(2)/Vs, subthreshold swing (SS) of 0.39V/decade, threshold voltage (V-TH) of 1.5 V, and I-ON/OFF ratio of similar to 10(7). A significant improvement in the field-effect mobility (up to similar to 33.5 cm(2)/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V-TH, or I-ON/OFF ratio due to the presence of a highly ordered microstructure.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)