EUV pellicle 의 standoff 거리에 따른 이미지 전사 특성 평가Evaluation on the relationship between mask imaging performance and standoff distance of EUV pellicle
- Other Titles
- Evaluation on the relationship between mask imaging performance and standoff distance of EUV pellicle
- Authors
- 우동곤; 홍성철; 김정식; 조한구; 안진호
- Issue Date
- Mar-2016
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- EUVL; EUV pellicle; coherent scattering microscopy (CSM); standoff distance; imaging performance
- Citation
- 반도체디스플레이기술학회지, v.15, no.1, pp.27 - 32
- Indexed
- KCI
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 15
- Number
- 1
- Start Page
- 27
- End Page
- 32
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23892
- ISSN
- 1738-2270
- Abstract
- Extreme ultraviolet (EUV) pellicle is one of the most concerned research in the field of EUV lithography (EUVL). Imaging performance of EUV mask with pellicle should be investigated prior to high volume manufacturing (HVM) of EUVL. In this paper, we analyzed the relationship between standoff distance and imaging performance of EUV mask to verify the influences of relative standoff distance on imaging performance. As a result, standoff distance of EUV pellicle has no effect on imaging performance of EUV mask such as critical dimension (CD), normalized image log slope (NILS) and image contrast. Therefore, pellicle support structure can be flexibly designed and modified in diverse ways to complement the thermal limitation of EUV pellicle membrane.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23892)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.