Detailed Information
Cited 10 time in 
Cited 11 time in 
Cited 11 time in
Metadata Downloads
Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier
- Issue Date
- Mar-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous indium-gallium-zinc-oxide (a-IGZO); instability; interstitial oxygen; oxygen vacancy; TFT
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.1054 - 1058
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 63
- Number
- 3
- Start Page
- 1054
- End Page
- 1058
- ISSN
- 0018-9383
- Abstract
- The effect of oxygen high pressurized treatment (OHPT) on the gate-bias thermal stress (BTS) instability of amorphous indium-gallium-zinc-oxide (IGZO) TFTs was investigated. OHPT at 10 atm and 300 degrees C produces TFTs with better reliability under the positive/negative BTS conditions, which can be attributed to the reduction in the oxygen vacancy defect. However, OHPT at a higher pressure (15 atm) deteriorated the BTS-induced stability of the IGZO TFTs. The rationale for this strong OHPT dependence on the BTS instability of IGZO TFTs was discussed based on the single-frame oxygen-related defect model.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)