Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing
- Authors
- Won, Ju Yeon; Han, Young Hun; Seol, Hyun Ju; Lee, Ki June; Choi, Rino; Jeong, Jae Kyeong
- Issue Date
- Mar-2016
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Printed contacts; Copper; Rapid temperature annealing; Indium-zinc-oxide; Semiconductor; Tantalum; Diffusion barrier; Thin-film transistors
- Citation
- THIN SOLID FILMS, v.603, pp.268 - 271
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 603
- Start Page
- 268
- End Page
- 271
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23937
- DOI
- 10.1016/j.tsf.2016.02.032
- ISSN
- 0040-6090
- Abstract
- The device performance of amorphous In-Zn-O (a-IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a-IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3 cm(2)/Vs, subthreshold gate swing (SS) values of 1.9 V/decade, and I-ON/OFF of similar to 10(6). In contrast, the SS, mobility, and I-ON/OFF ratio of RTP-annealed a-IZO TFTs with Cu/Ta contacts were 30.6 cm(2)/Vs, 0.68 V/decade, and 3 x 10(7), respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a-IZO channel due to the rapid heating associated with RTP annealing.
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