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The Effects of NF3/NH3 Remote Plasma Dry Cleaning on the Electrical Characteristics of MOS Device on the Highly Trenched Si Substrate
- Authors
- 최창환
- Issue Date
- 23-Aug-2018
- Place
- DCC, Daejeon, Korea
- Conference Name
- IUMRS-ICEM 2018
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)