Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO₂ layer
- Authors
- Lee, Juhyun; Lee, Jeongsu; Ham, Giyul; Shin, Seokyoon; Park, Joohyun; Choi, Hyeongsu; Lee, Seungjin; Kim, Juyoung; Sul, Onejae; Lee, Seungbeck; Jeon, Hyeongtag
- Issue Date
- Feb-2017
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v.7, no.2, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- AIP ADVANCES
- Volume
- 7
- Number
- 2
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2775
- DOI
- 10.1063/1.4977887
- ISSN
- 2158-3226
- Abstract
- We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel material for field-effect transistors (FETs) because of its high mobility, good on/off ratio and low temperature processability. In order to apply these 2D materials to large-scale and flexible electronics, it is essential to develop processes that are compatible with current electronic device manufacturing technology which should be conducted at low temperatures. Here, we deposited a crystalline SnS2 at 150 degrees C using ALD, and we then annealed at 300 degrees C. X-ray diffraction (XRD) and Raman spectroscopy measurements before and after the annealing showed that SnS2 had a hexagonal (001) peak at 14.9 degrees and A(1g) mode at 313 cm(-1). The annealed SnS2 exhibited clearly a layered structure confirmed by the high resolution transmission electron microscope (HRTEM) images. Back-gate FETs with SnS2 channel sandwiched by top and bottom ZrO2 on p(++) Si/SiO2 substrate were suggested to improve electrical characteristics. We used a bottom ZrO2 layer to increase adhesion between the channel and the substrate and a top ZrO2 layer to improve contact property, passivate surface, and protect from process-induced damages to the channel. ZTZ (ZrO2/SnS2/ZrO2) FETs showed improved electrical characteristics with an on/off ratio of from 0.39 x10(3) to 6.39 x10(3) and a mobility of from 0.0076 cm(2)/ Vs to 0.06 cm(2)/Vs.
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