A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays
- Authors
- Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Suria, Ateeq J.; Chapin, Caitlin A.; Senesky, Debbie G.
- Issue Date
- Sep-2016
- Publisher
- AMER INST PHYSICS
- Citation
- REVIEW OF SCIENTIFIC INSTRUMENTS, v.87, no.9, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- REVIEW OF SCIENTIFIC INSTRUMENTS
- Volume
- 87
- Number
- 9
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2802
- DOI
- 10.1063/1.4962704
- ISSN
- 0034-6748
- Abstract
- A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 x 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm x 1.35 mm) capable of determining incident light angles with a +/- 45 degrees field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0 degrees and 45 degrees was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.
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