Cu(In,Ga)Se 2 thin film preparation from a Cu(In,Ga) metallic alloy and se nanoparticles by an intense pulsed light technique
- Authors
- Dhage, S.R.; Kim, H.-S.; Hahn, H.T.
- Issue Date
- Feb-2011
- Keywords
- chalcopyrite; CIGS thin film; intense pulsed light; solar cells
- Citation
- Journal of Electronic Materials, v.40, no.2, pp.122 - 126
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Electronic Materials
- Volume
- 40
- Number
- 2
- Start Page
- 122
- End Page
- 126
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/28179
- DOI
- 10.1007/s11664-010-1431-x
- ISSN
- 0361-5235
- Abstract
- The main contribution of this paper is the development of a novel process for the formation of copper indium gallium diselenide (CIGS) films. CIGS films with a thickness of 4 μm and grain size from 0.3 μm to 1 μm were prepared from a Cu(In 0.7Ga 0.3) (CIG) metallic alloy and Se nanoparticles by the intense pulsed light (IPL) technique. The melting of the CIG and Se nanoparticles and nucleation of CIGS occurred in a very short reaction time of 2 ms. It is believed that the Se diffuses into the CIG lattice to form the CIGS chalcopyrite crystal structure. The tetragonal chalcopyrite crystal structure was confirmed by x-ray powder diffraction (XRD), while the microstructure and composition were determined by field-emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy (EDAX), and x-ray fluorescence (XRF) spectroscopy.
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