Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics
- Authors
- Abbas, Yawar; Ambade, Rohan B.; Ambade, Swapnil B.; Han, Tae Hee; Choi, Changhwan
- Issue Date
- Aug-2019
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.11, no.29, pp.13815 - 13823
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 11
- Number
- 29
- Start Page
- 13815
- End Page
- 13823
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2881
- DOI
- 10.1039/c9nr03465j
- ISSN
- 2040-3364
- Abstract
- We synthesized two different nanostructures of rutile TiO2 (r-TiO2) thin films on a fluorine-doped tin oxide (FTO) substrate at the lowest temperature reported until now and fabricated resistive random access memory (RRAM) devices with these r-TiO2 thin films having the stacking sequence of Ag/r-TiO2/FTO. Complementary resistive switching (CRS) and bipolar resistive switching (BRS) were observed in different thicknesses of r-TiO2 based devices. Benefiting from the in situ growth of the solution processed thin films and modulating the reaction growth rates, we successfully attained two different morphologies of r-TiO2 with a nanoplateau at a controlled deposition rate and pre-defined nanochannels at a higher deposition rate. The RRAM devices with nano-plateaus of r-TiO2 showed excellent CRS as well as unprecedented simultaneous observations of BRS. These CRS and BRS characteristics were reversible and reproducible. On the other hand, the tailored pre-defined nanochannels in r-TiO2 led to forming-free BRS with a pulse endurance higher than 10(7) without any degradation in the high and low resistance states. We propose a plausible switching mechanism of these unprecedented events using various physical and electrical characterization studies of low-temperature processed r-TiO2 RRAM devices. This work suggests the importance of solution-processed thin film engineering for RRAM switching with reliable and reproducible characteristics.
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