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Suppressed Charge Trapping Characteristics of (NH4)2Sx Passivated GaN MOS Device with Atomic Layer Deposited HfAlOx Gate Dielectric
- Authors
- 최창환
- Issue Date
- 28-Jun-2017
- Place
- 포츠담, 독일
- Conference Name
- Conference on Insulating Films on Semiconductors (INFOS)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)