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Performance Improvement of the Gate-Last Si-based TFET with Atomic Layer Deposited HfAlOx Gate Dielectrics
- Authors
- 최창환
- Issue Date
- 5-Jul-2016
- Publisher
- IEICE/IEIE
- Citation
- Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Conference Name
- Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place
- Hakodate, Japan
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)