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Low-temperature processed IGTO thin-film transistors with high mobility by reducing deposition pressure
- Issue Date
- Dec-2018
- Publisher
- International Display Workshops
- Keywords
- Densification; Indium gallium tin oxide (IGTO); Low temperature; Mobility; Sputtering
- Citation
- Proceedings of the International Display Workshops, v.1, pp.340 - 342
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 1
- Start Page
- 340
- End Page
- 342
- ISSN
- 1883-2490
- Abstract
- The sputtered IGTO films were prepared as the channel for the oxide thin-film transistors. The effects of chamber pressure (Pc) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. While at high Pc exhibited degraded device performance, the IGTO transistors fabricated at tow Pc and low annealing temperature of 150 °C showed a high mobility of 35.0 cm2/Vs and a low subthreshold gate swing of 0.17 V/decade.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)