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Interface Improvement of ALD Al2O3 Gate Dielectric/6H-SiC Substrate by Hydrogenation Passivation Technique
- Authors
- 최창환
- Issue Date
- 22-May-2012
- Publisher
- KIEEME, IEEK, KIM, MRS
- Citation
- 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
- Conference Name
- 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
- Place
- Busan Bexco, Korea
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)