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Bias dependence of PBTI degradation mechanism in metal-oxide semiconductor field effect transistors with La-incorporated hafnium-based dielectric
- Authors
- 최창환
- Issue Date
- 23-Jun-2011
- Publisher
- CEA-LETI, IMEP
- Citation
- 17th Conference on Insulating Films on Semiconductors (INFOS)
- Conference Name
- 17th Conference on Insulating Films on Semiconductors (INFOS)
- Place
- Grenoble, France
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)