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Post-Annealing effect on the electrical properties of top-gated SWNT network transistors
- Authors
- 박완준
- Issue Date
- 7-Oct-2009
- Place
- 센다이, 일본
- Conference Name
- l2009 International Conference on Solid State Devices and Materials
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Park, Wan jun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)