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electrical porperties of Al2O3/HfO2 stacked gate oxide formed by an off-axis rf remote plasmas oxidation method
- Authors
- 홍진표
- Issue Date
- 20040315
- Place
- 한국 경주
- Conference Name
- Seoul international symposium on the physics of semiconductors and applications
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)