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Characteristics of ZrO2/Al2O3 films for gate dielectric applications deposited by atomic deposition method
- Authors
- 전형탁
- Issue Date
- 20031107
- Place
- Jeju Island, Korea
- Conference Name
- 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Material
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)