Etch characteristics of magnetic tunnel junction materials using H₂/NH₃ reactive ion beam
- Authors
- Kim, Ju Eun; Kim, Doo San; Gill, You Jung; Jang, Yun Jong; Kim, Ye Eun; Cho, Hanna; Won, Bok-Yeon; Kwon, Oik; Yoon, Kukhan; Choi, Jin-Young; Park, JEA GUN; Yeom, Geun Young
- Issue Date
- Jan-2021
- Publisher
- IOP PUBLISHING LTD
- Keywords
- reactive ion beam etching (RIBE); magnetic random access memory (MRAM); magnetic tunnel junction (MTJ); x-ray photoelectron spectroscopy (XPS); H-2; NH3
- Citation
- NANOTECHNOLOGY, v.32, no.5, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 32
- Number
- 5
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/8109
- DOI
- 10.1088/1361-6528/abb04e
- ISSN
- 0957-4484
- Abstract
- Magnetic tunneling junction (MTJ) materials such as CoFeB, Co, Pt, MgO, and the hard mask material such as W and TiN were etched with a reactive ion beam etching (RIBE) system using H-2/NH3. By using gas mixtures of H-2 and NH3, especially with the H-2/NH3( 2:1) ratio, higher etch rates of MTJ related materials and higher etch selectivities over mask materials (>30) could be observed compared to those etching using pure H-2( no etching) and NH3. In addition, no significant chemical and physical damages were observed on etched magnetic materials surfaces and, for CoPt and MTJ nanoscale patterns etched by the H₂/NH₃( 2:1) ion beam, highly anisotropic etch profiles >83 degrees with no sidewall redeposition could be observed. The higher etch rates of magnetic materials such as CoFeB by the H₂/NH₃( 2:1) ion beam compared to those by H₂ ion beam or NH₃ ion beam are believed to be related to the formation of volatile metal hydrides (MH, M = Co, Fe, etc) through the reduction of M-NHx( x = 1 similar to 3) formed in the CoFeB surface by the exposure to NH₃ ion beam. It is believed that the H₂/NH₃ RIBE is a suitable technique in the etching of MTJ materials for the next generation nanoscale spin transfer torque magnetic random access memory (STT-MRAM) devices.
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