Diode Bridge Embedded AlGaN/GaN Bidirectional Switch
- Authors
- Park, Bong-Ryeol; Han, Sang-Woo; Cha, Ho-Young
- Issue Date
- Apr-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bi-directional switch; diode bridge; GaN; metal-oxide-semiconductor heterostructure field-effect-transistor (MOSHFET)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.36, no.4, pp.324 - 326
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 36
- Number
- 4
- Start Page
- 324
- End Page
- 326
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/10066
- DOI
- 10.1109/LED.2015.2398459
- ISSN
- 0741-3106
- Abstract
- We have developed an AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) based bidirectional switch with embedded diode bridges for power switching applications. Four Schottky barrier diodes were embedded in an AlGaN/GaN MOSHFET to minimize the parasitic elements and thus reduce the chip area. The fabricated device functioned as a normally OFF, bidirectional switch, where the gate threshold voltage was similar to 1 V in both forward and reverses modes. The maximum drain current density in forward and reverse operation was similar to 120 mA/mm with the gate voltage of 12 V. The forward and reverse OFF-state breakdown voltages were 861 and 946 V, respectively.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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