Development of Catalytic-CVD SiN(x)Passivation Process for AlGaN/GaN-on-Si HEMTs
- Authors
- Kang, Myoung-Jin; Kim, Hyun-Seop; Cha, Ho-Young; Seo, Kwang-Seok
- Issue Date
- Sep-2020
- Publisher
- MDPI
- Keywords
- AlGaN; GaN; high electron mobility transistor; catalytic-CVD; SiN(x)passivation; current collapse
- Citation
- CRYSTALS, v.10, no.9, pp.1 - 13
- Journal Title
- CRYSTALS
- Volume
- 10
- Number
- 9
- Start Page
- 1
- End Page
- 13
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11560
- DOI
- 10.3390/cryst10090842
- ISSN
- 2073-4352
- Abstract
- We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiN(x)film exhibited a high film density of 2.7 g/cm(3)with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiN(x)passivation process, which had a gate length of 1.5 mu m and a source-to-drain distance of 6 mu m, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiN(x)film had positive charges, which were responsible for suppressing the current collapse phenomenon.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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