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SF<inf>6</inf> plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
- Authors
- Kim, Hyun-seop; H.-S.; Seo; K.-S.; Oh; J.; Cha, Hoyoung; H.-Y.
- Issue Date
- 2018
- Citation
- Results in Physics, v.10, pp.248 - 249
- Journal Title
- Results in Physics
- Volume
- 10
- Start Page
- 248
- End Page
- 249
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)