Prediction of Electric Field Effects on Defect-Free Self-Assembled Nano-Patterning of Block Copolymer
- Authors
- Kim, Sang-Kon
- Issue Date
- Mar-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Lithography; Lithography Simulation; Self-Assembly; Monte Carlo Method; Self-Consistent-Field Theory; Electrohydrodynamic Lithography
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.3, pp.2706 - 2709
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 3
- Start Page
- 2706
- End Page
- 2709
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13410
- DOI
- 10.1166/jnn.2016.11082
- ISSN
- 1533-4880
- Abstract
- For future semiconductor device scaling, self-assembly, directed self-assembly (DSA) of block copolymers (BCPs), is a promising method with simplified processing conditions; however, critical challenge is defect control for fine pattern. Electric field is a method for the defect control. In this paper, for electric field effects to jog defects, the electric field induced self-assembled patterns is modeled and simulated by using the Monte Carlo method of dielectric polymers, the self-consistentfield theory (SCFT), and the Navier-Stokes equation. Electric field effects are quantified by using defect degree. Defective patterns are forced to undergo a phase transition to lamellar phase under electric field. For the high electric field, the excess free energy for the defect-free state becomes small. Simulation results can help to optimize electric field and process time in terms of defect area.
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Collections - Department of General Studies > Department of General Studies > 1. Journal Articles
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