Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
AlGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode
- Issue Date
- Nov-2014
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- AlGaN/GaN; conversion efficiency; freewheeling diode; metal-oxide-semiconductor heterojunction field-effect transistor; synchronous buck converter
- Citation
- ELECTRONIC MATERIALS LETTERS, v.10, no.6, pp.1115 - 1120
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 10
- Number
- 6
- Start Page
- 1115
- End Page
- 1120
- ISSN
- 1738-8090
- Abstract
- In this study, a novel AlGaN/GaN power-switching device is proposed for use in high-efficiency DC-DC converters. The proposed structure is composed of a normally-off AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) and an embedded freewheeling Schottky barrier diode (SBD). The effects of the embedded freewheeling SBD on conversion efficiency were investigated based on circuit simulation of DC-DC synchronous buck converters. The SBD embedment not only reduces the chip size and cost, but also improves the power conversion efficiency at high operation frequencies, due to the reduced off-state power loss.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Hyung tak
- Engineering (Electronic & Electrical Engineering)