A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz
- Authors
- Lee, Min-Seong; Kim, Donghwan; Eom, Sukeun; Cha, Ho-Young; Seo, Kwang-Seok
- Issue Date
- Oct-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- AlGaN/GaN-on-Si; power density; PAE; X-band; amplifier
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.995 - 997
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 35
- Number
- 10
- Start Page
- 995
- End Page
- 997
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16575
- DOI
- 10.1109/LED.2014.2343233
- ISSN
- 0741-3106
- Abstract
- A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 mu s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering > 10 W of output power in X-band for GaN HEMTs technology on silicon substrate.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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