Ion activation in boron-doped polycrystalline Si thin films prepared on glass substrates
- Authors
- So, Byoung-Soo; Park, Chan-Rok; Bae, Seung-Muk; Kim, Young-Hwan; Hwang, Jinha
- Issue Date
- Oct-2013
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Boron implantation; Activation; Raman spectroscopy; Hall measurements
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.7, pp.1362 - 1367
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 63
- Number
- 7
- Start Page
- 1362
- End Page
- 1367
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17036
- DOI
- 10.3938/jkps.63.1362
- ISSN
- 0374-4884
- Abstract
- Boron-implanted polycrystalline Si thin films were subjected to thermal annealing. Their evolving electrical and structural features were characterized using Hall measurements, Raman Spectroscopy, transmission electron microcopy, and UV-Visible transmittance spectrophotometry. The Raman analysis indicated that boron implantation did not induce structurally significant damage, i.e., lattice distortion. Even low-temperature annealing at 350 A degrees C provided a high degree of activation, keeping the atomic structure restored on the short-range order, as confirmed by transmission electron microscopy and optical transmittance data. At temperatures above 350 A degrees C, the charge carriers exhibited temperature-independent behaviors, with a charge carrier concentration of 6 or 7 x 10(19)/cm(3). The boron-implanted Si thin films were found to be subject to electronic stopping rather than nuclear stopping, thus allowing for low-temperature activation.
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