Capacitance-voltage analysis of LaAlO3/SrTiO3 heterostructures
- Authors
- Kim, Seong Keun; Kim, Shin-Ik; Hwang, Jin-Ha; Kim, Jin-Sang; Baek, Seung-Hyub
- Issue Date
- 18-Mar-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.11
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 11
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17161
- DOI
- 10.1063/1.4798334
- ISSN
- 0003-6951
- Abstract
- We performed capacitance-voltage analysis of 5-nm-thick LaAlO3/SrTiO3 heterostructure containing two-dimensional-electron-gas (2DEG) at the interface. The complex impedance of the heterostructure was measured as a function of frequency for a wide range of gate biases. The impedance spectra showed a different behavior above and below an applied voltage of -1.8V. The capacitance determined from the impedance was approximately 1.2 nF above -1.8V and was drastically reduced to similar to 0.01 nF below this voltage, owing to depletion of 2DEG and the insulating SrTiO3 underneath it. This suggests that devices utilizing LaAlO3/SrTiO3 can facilitate switching operations in a very small voltage range. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798334]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17161)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.