High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs
- Authors
- Park, Bong-Ryeol; Lee, Jae-Gil; Choi, Woojin; Kim, Hyungtak; Seo, Kwang-Seok; Cha, Ho-Young
- Issue Date
- Mar-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- GaN; inductively coupled plasma chemical vapor deposition (ICPCVD); metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET); SiO2
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.354 - 356
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 3
- Start Page
- 354
- End Page
- 356
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17164
- DOI
- 10.1109/LED.2012.2236678
- ISSN
- 0741-3106
- Abstract
- We have developed a high-quality SiO2 deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of similar to 12 MV/cm was achieved using the optimized deposition conditions that were successfully applied in fabrication of the normally off AlGaN/GaN-on-Si MOSHFETs. The fabricated device exhibited excellent characteristics: a maximum drain current density of 375 mA/mm, a threshold voltage of 3 V, and a breakdown voltage of 820 V.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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