Thermoelectric Characteristics of n-Type Bi2Te3 and p-Type Sb2Te3 Thin Films Prepared by Co-Evaporation and Annealing for Thermopile Sensor Applications
- Authors
- Kim, Jae-Hwan; Choi, Jung-Yeol; Bae, Jae-Man; Kim, Min-Young; Oh, Tae-Sung
- Issue Date
- 2013
- Publisher
- JAPAN INST METALS
- Keywords
- thermoelectric sensor; thermopile; thin film; co-evaporation; annealing; bismuth telluride; antimony telluride
- Citation
- MATERIALS TRANSACTIONS, v.54, no.4, pp.618 - 625
- Journal Title
- MATERIALS TRANSACTIONS
- Volume
- 54
- Number
- 4
- Start Page
- 618
- End Page
- 625
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17348
- DOI
- 10.2320/matertrans.M2013010
- ISSN
- 1345-9678
- Abstract
- A thermoelectric thin-film device consisting of n-type Bi2Te3 and p-type Sb2Te3 thin-film legs was prepared on a glass substrate by using co-evaporation and annealing process. The Seebeck coefficient and the power factor of the co-evaporated Bi2Te3 film were -30 mu V/K and 0.7 x 10(-4) W/K-2.m, respectively, and became substantially improved to -160 mu V/K and 16 x 10(-4) W/K-2.m by annealing at 400 degrees C for 20 min. While the Seebeck coefficient of the co-evaporated Sb2Te3 thin film was 72 mu V/K, it increased significantly to 165-142 mu V/K by annealing at 200-400 degrees C for 20 min. A maximum power factor of 25 x 10(-4) W/K-2.m was achieved for the co-evaporated Sb2Te3 film by annealing at 400 degrees C for 20 min. A thermopile sensor consisting of 10 pairs of n-type Bi2Te3 and p-type Sb2Te3 thin-film legs exhibited a sensitivity of 2.7 mV/K.
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