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Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive SputteringDeposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive Sputtering

Other Titles
Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Prepared by Reactive Sputtering
Authors
유일환배승묵김영환황진하
Issue Date
2013
Publisher
한국마이크로전자및패키징학회
Keywords
CuO thin films; Nonohmic Responses; Diode; n-Type Si
Citation
마이크로전자 및 패키징학회지, v.20, no.1, pp.27 - 31
Journal Title
마이크로전자 및 패키징학회지
Volume
20
Number
1
Start Page
27
End Page
31
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17960
DOI
10.6117/kmeps.2013.20.1.027
ISSN
1226-9360
Abstract
Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the O2 fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Xray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of Cu2+. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of 3.8×103. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials.
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