Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range
- Authors
- Kim, Yongsik; Bae, Minkyung; Kim, Woojoon; Kong, Dongsik; Jeong, Hyun Kwang; Kim, Hyungtak; Choi, Sunwoong; Kim, Dong Myong; Kim, Dae Hwan
- Issue Date
- Oct-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous InGaZnO (a-IGZO); density of states (DOS); full subband gap; thin-film transistors (TFTs)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.10, pp.2689 - 2698
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 59
- Number
- 10
- Start Page
- 2689
- End Page
- 2698
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/18889
- DOI
- 10.1109/TED.2012.2208969
- ISSN
- 0018-9383
- Abstract
- A combination of the multifrequency C-V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range (E-V <= E <= E-C) including the interface trap density between the gate oxide and the a-IGZO active layer. In particular, our result on the separate extraction of acceptor- and donor-like DOS is noticeable for a systematic design of amorphous oxide semiconductor TFTs because the former determines their dc characteristics and the latter does their threshold voltage (V-T) instability under practical operation conditions. The proposed approach can be used to optimize the fabrication process of thin-film materials with high mobility and stability for mass-production-level amorphous oxide semiconductor TFTs.
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