Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications
- Authors
- Lee, Jae-Gil; Lee, Ho-Jung; Cha, Ho-Young; Lee, Minseong; Ryoo, Yeonmi; Seo, Kwang-Seok; Mun, Jae-Kyoung
- Issue Date
- Sep-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- AlGaN/GaN-on-Si HEMT; Breakdown voltage; Field plate; Post-annealing
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.3, pp.2297 - 2300
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 59
- Number
- 3
- Start Page
- 2297
- End Page
- 2300
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19816
- DOI
- 10.3938/jkps.59.2297
- ISSN
- 0374-4884
- Abstract
- In this study, we fabricated AlGaN/CaN-on-Si high electron mobility transistors (HEMTs) for high voltage switching applications where both the field plate length and the gate-to-drain distance were varied for structural optimization. A tapered gate was fabricated in conjunction with the field plate in order to effectively suppress the high electric field at the gate edge. Regardless of the gate-to-drain distance, which was varied from 7 to 20 mu m, the highest breakdown voltage was obtained with a short field plate length (i.e., 2 3 mu m), and the breakdown voltage monotonically decreased with increasing field plate length. A breakdown voltage of 1200 V with an on-resistance of 3.7 m Omega.cm(2) was achieved using a gate-to-drain distance of 20 mu m and a field plate length of 3 mu m.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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