Prepassivated AlGaN/GaN HEMTs with improved edge acuity in annealed ohmic contacts
- Authors
- Lee, M.; Ryoo, Y.; Lee, J. -G.; Cha, H. -Y.; Seo, K.
- Issue Date
- 9-Jun-2011
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.47, no.12, pp.725 - 726
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 47
- Number
- 12
- Start Page
- 725
- End Page
- 726
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19865
- DOI
- 10.1049/el.2011.1190
- ISSN
- 0013-5194
- Abstract
- Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step sequential annealing in conjunction with a low-damage SiN(x) dry etching technique was employed in a pre-passivation process in order to improve the edge acuity in annealed ohmic contacts. As a result, uniformity in breakdown voltage was significantly improved in comparison with a conventional process.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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