Electropolishing and electroless plating of copper and tin to replace CMP and lithographic processes in Cu/Sn bump fabrication
- Authors
- Jung, M.-W.; Kim, S.-H.; Moon, Y.-S.; Lee, S.-E.; Ko, Y.-K.; Lee, J.-H.
- Issue Date
- 2011
- Citation
- Proceedings - Electronic Components and Technology Conference, pp.1913 - 1916
- Journal Title
- Proceedings - Electronic Components and Technology Conference
- Start Page
- 1913
- End Page
- 1916
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20558
- DOI
- 10.1109/ECTC.2011.5898777
- ISSN
- 0569-5503
- Abstract
- A serial electrochemical process consist of copper via filling, electropolishing, electroless copper plating and electroless tin plating is presented for the TSV 3D SiP application. Defect-free copper via filling was achieved by controlling current modes and additives. After via filling, electropolishing was performed to planarize over-plated copper. Electropolishing within the potential of mass-transfer region and with the assistance of additives, fine polished surface without thickness disparity was achieved. For bump formation process, electroless copper and tin plating which is a self-aligned process was applied. Consequently, Cu/Sn bump on via patterned wafer was obtain without using the conventional CMP and lithographic processes. © 2011 IEEE.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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