Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads
- Authors
- Seo, Seung Gi; Han, Sang-Woo; Cha, Ho-Young; Yang, Sunggu; Jin, Sung Hun
- Issue Date
- Jan-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Photosensitive inverters; MoS2 FETs; low noise margin; GaN FETs; light-shield layers (LSLs); biosensors
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.40, no.1, pp.107 - 110
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 40
- Number
- 1
- Start Page
- 107
- End Page
- 110
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/2080
- DOI
- 10.1109/LED.2018.2879908
- ISSN
- 0741-3106
- Abstract
- Herein, GaN driver FETs with a high-energy bandgap are employed in photosensitive inverters to eliminate light-shield layers (LSLs). This configuration exhibits the full-swing characteristics of photosensitive inverters comprised of multi-layered MoS2 FET loads in the photo-sensitive pseudo-depletion mode. The GaN FETs provide both high current drivability and excellent photo-leakage immunity under visible light. This allows the photosensitive inverters to be successfully operational without LSLs. The relative degradation (%) of voltage gain for photosensitive inverters with GaN drivers from dark to blue light exposure is improved from 67.7% to 53.0%, as compared to previously reported MoS2 inverters with LSLs.
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