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Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon
- Authors
- Cho, Chun-Hyung; Choi, Ginkyu; Cha, Ho-Young
- Issue Date
- May-2010
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- VDP (van der Pauw) strain effects (111) silicon stress sensors; piezo-resistive coefficients
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E93C, no.5, pp.640 - 643
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E93C
- Number
- 5
- Start Page
- 640
- End Page
- 643
- ISSN
- 0916-8524
- Abstract
- We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.
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Related Researcher
- Cho, Chun Hyung
- Science & Technology (Department of Electronic & Electrical Convergence Engineering)