NiO thin films by MOCVD of Ni(dmamb)(2) and their resistance switching phenomena
- Authors
- Min, K.-C.; Kim, M.; You, Y.-H.; Lee, S. S.; Lee, Y. K.; Chung, T.-M.; Kim, C. G.; Hwang, J.-H.; An, K.-S.; Lee, N.-S.; Kim, Y.
- Issue Date
- 25-Sep-2007
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- nickel oxide; Nickel bis(1-dimethylamino-2-methyl-2-butanolate); resistance switching phenomenon; resistive random access memory
- Citation
- SURFACE & COATINGS TECHNOLOGY, v.201, no.22-23, pp.9252 - 9255
- Journal Title
- SURFACE & COATINGS TECHNOLOGY
- Volume
- 201
- Number
- 22-23
- Start Page
- 9252
- End Page
- 9255
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23538
- DOI
- 10.1016/j.surfcoat.2007.04.120
- ISSN
- 0257-8972
- Abstract
- We have synthesized the volatile, liquid, nickel precursor Ni(dmamb)(2), nickel bis(1-dimethylamino-2-methyl-2-butanolate), Ni[OC(CH3) (C2H5)CH2N(CH3)(2)](2), and employed it in the MOCVD of nickel oxide (NiO). A stainless steel, cold-wall, low-pressure reactor was employed to grow the NiO films on Si and Pt/SiO2/Si substrates. In addition, the resistance switching property of the Pt/NiO/Pt capacitor structure was investigated. The substrate temperature was varied in the range 230-410 degrees C. The films deposited were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and I-V measurements. They were polycrystalline showing dominantly the NiO (I 11) peak in their X-ray diffraction patterns. The films were found to be almost stoichiometric with the Ni:O ratio of 1.1:0.9 and no appreciable amount of carbon incorporation was detected by XPS. The I-V measurements revealed an interesting switching property of the NiO films showing low and high resistance states thereby suggesting their application as ReRAM devices. (c) 2007 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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