On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer
- Authors
- Im, Ki-Sik; Choi, Uiho; Kim, Minho; Choi, Jinseok; Kim, Hyun-Seop; Cha, Ho-Young; An, Sung Jin; Nam, Okhyun
- Issue Date
- 3-Jan-2022
- Publisher
- AIP Publishing
- Citation
- APPLIED PHYSICS LETTERS, v.120, no.1
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 120
- Number
- 1
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24330
- DOI
- 10.1063/5.0074137
- ISSN
- 0003-6951
- Abstract
- The AlGaN/GaN heterojunction field-effect transistor (HFET) with an AlN buffer layer (the proposed device) was fabricated, and its noise performances were investigated compared to the conventional AlGaN/GaN HFET with a GaN buffer layer (the reference device). Both devices with a gate length of 0.5 mu m demonstrated 1/f noise properties with carrier number fluctuations channel mechanism, regardless of the buffer layer. The proposed device had higher off-state leakage current and larger trap density (N-t) than those of the reference device because of the partially strained GaN (83% relaxed GaN) channel grown on a AlN buffer layer. However, the noise measurements at off-state proved that the generation-recombination (g-r) noise is absent in the proposed device due to the AlN buffer layer with high bandgap energy (E-g = 6.2 eV), whereas the reference device suffers from the g-r noise in the GaN buffer layer.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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