High-performance low-voltage tetracene phototransistors with polymer/AlOx bilayer dielectric
- Authors
- Choi, Jeong-M.; Lee, Kimoon; Hwang, D. K.; Park, Ji Hoon; Kim, Eugene; Im, Seongil
- Issue Date
- 2006
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G289 - G291
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 9
- Number
- 9
- Start Page
- G289
- End Page
- G291
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24624
- DOI
- 10.1149/1.2211847
- ISSN
- 1099-0062
- Abstract
- We report on the tetracene-based photo thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (AlOx) bilayer and semitransparent NiOx for a gate dielectric and source/drain (S/D) electrode, respectively. Quite a large capacitance of 31 nF/cm(2) was effectively achieved from the thin polymer/high-k oxide dielectric bilayer that also showed a high dielectric strength of similar to 4 MV/cm. Our tetracene-based TFTs exhibited quite a good field effect mobility (similar to 0.23 cm(2)/V s) and a high on/off current ratio of similar to 10(5), while operating at a voltage less than -8 V. The tetracene-TFTs demonstrated good static photoresponses to green (540 nm), blue (450 nm), and ultraviolet (364 nm) illuminations under the low voltage. (c) 2006 The Electrochemical Society.
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