Atomic layer deposition of Al2O3/NiO/Al 2O3 laminate structures for nonvolatile memory device applications
- Authors
- Cho, W.; You, Y.-H.; Lee, S.S.; Chung, T.-M.; Lee, Y.K.; Kim, C.G.; Hwang, J.-H.; An, K.-S.
- Issue Date
- 2006
- Publisher
- Electrochemical Society Inc.
- Citation
- ECS Transactions, v.3, no.15, pp.283 - 285
- Journal Title
- ECS Transactions
- Volume
- 3
- Number
- 15
- Start Page
- 283
- End Page
- 285
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25043
- DOI
- 10.1149/1.2721498
- ISSN
- 1938-5862
- Abstract
- We have fabricated Al2O3/NiO/Al2O 3 nano-laminate structures on Si(001) substrate using atomic layer deposition (ALD) technique for floating gate memory application. The nonvolatile capacitance-voltage (C-V) characterisitics have been investigated. NiO and Al2O3 films, as charge trapping and insulating barrier layer, were deposited using newly-synthesized Ni aminoalkoxide (Ni(dmamb) 2) and trimethylaluminum (TMA) with H2O, respectively. The hysteresis voltage window of the Al2O3 (20nm)/NiO (5 nm)/Al2O3 (5 nm) laminate structure is ∼8.6 V in voltage sweep range from -7.5 to 7.5 V, while there is no hysteresis in the Al2O3 film. copyright The Electrochemical Society.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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