Point defects and related properties of highly co-doped bixbyite In2O3
- Authors
- Mason, TO; Gonzalez, GB; Hwang, JH; Kammler, DR
- Issue Date
- 2003
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.5, no.11, pp.2183 - 2189
- Journal Title
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Volume
- 5
- Number
- 11
- Start Page
- 2183
- End Page
- 2189
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/26648
- DOI
- 10.1039/b300171g
- ISSN
- 1463-9076
- Abstract
- The method of co-doping has been employed to achieve and study the influence of high defect populations in bixbyite In2O3. Substantial metastable Sn-doping levels can be achieved in nanocrystalline In2O3 with associated co-doping by oxygen interstitials. The resulting electrical properties, diffraction data (X-ray and neutron), and EXAFS studies support the presence of 2 : 1 Sn-oxygen interstitial point defect clusters. Upon reduction, some of these clusters can be reduced to liberate donors and generate charge carriers. Extensive Cd/Sn co-substitution for indium in In2O3 has been achieved in equilibrium solid solutions. This self-compensated (isovalent) and relatively size-matched substitution reveals a tendency for off-stoichiometry in favor of donors, resulting in "self-doped'' behavior irrespective of oxygen partial pressure. Rami. cations of bixbyite defect structure for transparent electrode applications are discussed.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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