Content-Addressable Memory System Using a Nanoelectromechanical Memory Switch
- Authors
- Kim, Hyunju; Cho, Mannhee; Lee, Sanghyun; Kwon, Hyug Su; Choi, Woo Young; Kim, Youngmin
- Issue Date
- 1-Feb-2022
- Publisher
- MDPI
- Keywords
- content addressable memory (CAM); binary CAM; BCAM; ternary CAM; TCAM; nanoelectromechanical (NEM); NEM memory switch
- Citation
- ELECTRONICS, v.11, no.3
- Journal Title
- ELECTRONICS
- Volume
- 11
- Number
- 3
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/26666
- DOI
- 10.3390/electronics11030481
- ISSN
- 2079-9292
- Abstract
- Content-addressable memory (CAM) performs a parallel search operation by comparing the search data with all content stored in memory during a single cycle, instead of finding the data using an address. Conventional CAM designs use a dynamic CMOS architecture for high matching speed and high density; however, such implementations require the use of system clocks, and thus, suffer from timing violations and design limitations, such as charge sharing. In this paper, we propose a static-based architecture for a low-power, high-speed binary CAM (BCAM) and ternary CAM (TCAM), using a nanoelectromechanical (NEM) memory switch for nonvolatile data storage. We designed the proposed CAM architectures on a 65 nm process node with a 1.2 V operating voltage. The results of the layout simulation show that the proposed design has up to 23% less propagation delay, three times less matching power, and 9.4 times less area than a conventional design.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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