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Fabrication and Electrical Properties of Chemical Bath Deposited CdS-Based Transparent Thin-Film-Transistors
- Authors
- Kwon, J. H.; Ahn, J. S.; Yang, H.
- Issue Date
- 2011
- Publisher
- INST IMAGE INFORMATION & TELEVISION ENGINEERS
- Citation
- IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, pp.117 - 120
- Start Page
- 117
- End Page
- 120
- ISSN
- 1883-2490
- Abstract
- Using CdS active layer generated by a chemical bath deposition, transparent thin-film-transistors (TFTs) were fabricated with a bottom-gate scheme of glass/ITO/SiNx/CdS/Al. After annealing as-grown CdS at 350 degrees C, fabricated transparent TFT exhibited a saturated field effect mobility of 0.7 cm(2)/V.s, a threshold voltage of 11.3 V and an on/off ratio of similar to 10(7).
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Collections - Graduate School > Materials Science and Engineering > 1. Journal Articles
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Related Researcher
- Yang, Hee sun
- Graduate School (Department of Materials Science and Engineering)