Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In<sub>2</sub>O<sub>3</sub> and Application to High-Performance Field-Effect Transistors
- Authors
- Lee, Ho Young; Hur, Jae Seok; Cho, Iaan; Choi, Cheol Hee; Yoon, Seong Hun; Kwon, Yongwoo; Shong, Bonggeun; Jeong, Jae Kyeong
- Issue Date
- 25-Oct-2023
- Publisher
- AMER CHEMICAL SOC
- Keywords
- indium oxide; field-effect transistor; atomiclayer deposition; precursor; density functionaltheory
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.15, no.44, pp 51399 - 51410
- Pages
- 12
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 15
- Number
- 44
- Start Page
- 51399
- End Page
- 51410
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32117
- DOI
- 10.1021/acsami.3c11796
- ISSN
- 1944-8244
1944-8252
- Abstract
- Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional (M3D) devices. The structural, chemical, and electrical properties of In2O3 films deposited by plasma-enhanced atomic layer deposition (PEALD) were examined using two different liquid-based precursors: (3-(dimethylamino)-propyl)-dimethyl indium (DADI) and (N,N-dimethylbutylamine)-trimethylindium (DATI). DATI-derived In2O3 films had higher growth per cycle (GPC), superior crystallinity, and low defect density compared with DADI-derived In2O3 films. Density functional theory calculations revealed that the structure of DATI can exhibit less steric hindrance compared with that of DADI, explaining the superior physical and electrical properties of the DATI-derived In2O3 film. DATI-derived In2O3 field-effect transistors (FETs) exhibited unprecedented performance, showcasing a high field-effect mobility of 115.8 cm(2)/(V s), a threshold voltage of -0.12 V, and a low subthreshold gate swing value of <70 mV/decade. These results were achieved by employing a 10-nm-thick HfO2 gate dielectric layer with an effective oxide thickness of 3.9 nm. Both DADI and DATI-derived In2O3 FET devices exhibited remarkable stability under bias stress conditions due to a high-quality In2O3 channel layer, good gate dielectric/channel interface matching, and a suitable passivation layer. These findings underscore the potential of ALD In2O3 films as promising materials for upper-layer channels in the next generation of M3D devices.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
- College of Engineering > Chemical Engineering Major > 1. Journal Articles
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